| Part Number: 71B229S16LB | Manufacturer: Integrated Device Technology Inc |
| NSN : 5962-01-415-1213 (5962014151213) | Item Name : microcircuit memory |
| CAGE Code: 61772 | FSC : 5962 Microcircuits Electronic |
| NIIN : 01-415-1213 (014151213) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-415-1213 Item Description: Microcircuit Memory | 5962 | 014151213 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 71b229s16lb | 5 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEN | Voltage Rating And Type Per Characteristic | 4.5 VOLTS MINIMUM TOTAL SUPPLY AND 5.5 VOLTS MAXIMUM TOTAL SUPPLY |
| AGAV | End Item Identification | F-16 MODULAR MISSION COMPUTER CORE CLUSTER |
| CZER | Memory Device Type | RAM |
| AFJQ | Storage Temp Range | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | Features Provided | ELECTROSTATIC SENSITIVE |
| MRC | Decoded Requirement | Clear Text Reply |
| ADAT | Body Width | 0.395 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| TTQY | Terminal Type And Quantity | 32 PRINTED CIRCUIT |
| CWSG | Terminal Surface Treatment | SOLDER |
| ADAQ | Body Length | 0.817 INCHES MINIMUM AND 0.833 INCHES MAXIMUM |
| AEHX | Maximum Power Dissipation Rating | 1.0 WATTS |
| ADAU | Body Height | 0.080 INCHES MINIMUM AND 0.100 INCHES MAXIMUM |
| CXCY | Part Name Assigned By Controlling Agency | MICROCIRCUIT, DIGITAL, MEMORY, CACHE RAM, 16K X 9 X 2 |
| TEST | Test Data Document | 96906-MIL-STD883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CQSZ | Inclosure Configuration | DUAL-IN-LINE |
| AFGA | Operating Temp Range | -55.0 TO 125.0 DEG CELSIUS |
| FEAT | Special Features | BICAMERAL (2 BANK) CACHE RAM SPECIFICALLY DESIGNED TO SUPPORT SPLIT INSTRUCTION AND DATA CACHES OF R3000 TYPE MICROPROCESSORS |
| CQWX | Output Logic Form | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CRTL | Criticality Code Justification | CBBL |
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