| Part Number: TX6105 | Manufacturer: Mercury Commercial Electronics Inc |
| NSN : 5961-01-394-4899 (5961013944899) | Item Name : semiconductor devices unitized |
| CAGE Code: 54487 | FSC : 5961 Semiconductor Devices and Associated Hardware |
| NIIN : 01-394-4899 (013944899) | FSG : 59 Electrical and Electronic Equipment Components |
| Country: USA | NCB Code: 01 |
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-394-4899 Item Description: Semiconductor Devices Unitized | 5961 | 013944899 | 0 | N | A | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | A | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Tx6105 | 5 | 2 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC AND METAL" |
| ABHP | OVERALL LENGTH | 0.460 INCHES NOMINAL" |
| ABKW | OVERALL HEIGHT | 0.040 INCHES MAXIMUM" |
| ABMK | OVERALL WIDTH | 0.460 INCHES NOMINAL" |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE" |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR" |
| FEAT | SPECIAL FEATURES | COMMON ANODE CONFIGURATION//THE CERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: PIN" |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON" |
| ABBH | INCLOSURE MATERIAL | CERAMIC AND METAL" |
| ABHP | OVERALL LENGTH | 0.460 INCHES NOMINAL" |
| ABKW | OVERALL HEIGHT | 0.040 INCHES MAXIMUM" |
| ABMK | OVERALL WIDTH | 0.460 INCHES NOMINAL" |
| ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE" |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR" |
| FEAT | SPECIAL FEATURES | COMMON ANODE CONFIGURATION//THE CERAMIC CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES; JUNCTION PATTERN ARRANGEMENT: PIN" |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON" |
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